NXP Semiconductors N.V. expanded its portfolio of broadband gallium nitride (GaN) RF power transistors ideal for electronic warfare and battlefield radio applications. The expansion includes six new driver or final-stage amplifiers that have frequency coverage as broad as 1 to 3000 MHz.   The new GaN on SiC transistors combine high power density, ruggedness and very flat frequency response over wide bandwidths. All are input matched to optimize operating frequency range, and can withstand a VS...